Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures
Identifieur interne : 000741 ( Main/Repository ); précédent : 000740; suivant : 000742Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures
Auteurs : RBID : Pascal:13-0229225Descripteurs français
- Pascal (Inist)
- Dépôt électrolytique, Semiconducteur II-VI, Cellule solaire, Structure cellulaire, Verre, Dispositif photovoltaïque, Vide poussé, Evaporation sous vide, Recuit, Chlorure de cadmium, Cuivre, Dopage, Naphtalène, Sulfonate, Pyrrole polymère, Sulfure de cadmium, Tellurure de cadmium, Oxyde d'indium, Oxyde d'étain, Electrode électrochimique, Eclairement, Xénon, Film polymère, Piqûre corrosion, Polymère conducteur, CdS, CdTe, CdCl2, Xe, 8115P, 8105D, 8460J, 8105H.
- Wicri :
English descriptors
- KwdEn :
- Annealing, Cadmium chloride, Cadmium sulfide, Cadmium tellurides, Cellular structure, Conducting polymers, Copper, Doping, Electrochemical electrodes, Electrodeposition, Glass, High vacuum, II-VI semiconductors, Illumination, Indium oxide, Naphthalene, Photovoltaic cell, Pinholes, Polymer films, Polypyrroles, Solar cells, Sulfonates, Tin oxide, Vacuum evaporation, Xenon.
Abstract
Glass/indium tin oxide/CdS/CdTe photovoltaic structures were prepared using the high vacuum evaporation method, followed by a typical activation procedure, which involves annealing of the structures at 415-430 °C in the presence of CdCl2 in air. The main purpose of this work was to prepare and evaluate the performance of complete CdS/CdTe solar cell structures with polypyrrole (PPy) back contact and compare it to the structures with standard, copper containing back contact. Back contact layers of PPy doped with β-naphthalene sulfonate were deposited onto activated CdTe layers by photo-assisted electrodeposition technique in a three-electrode electrochemical cell. It was found that intensive white light illumination from a xenon lamp facilitates PPy deposition at a lower applied potential range and improves quality of obtained polymer films. Applied technique gives the possibility to deposit the PPy layer strictly onto illuminated photoactive CdTe surface eliminating possible short-circuiting through pinholes and cracks in CdTe photoabsorber layer. Furthermore, relatively low deposition potential values give the possibility to reduce electrochemical degradation of CdS/CdTe photovoltaic structure in an electrochemical cell.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures</title><author><name sortKey="Jarkov, A" uniqKey="Jarkov A">A. Jarkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Bereznev, S" uniqKey="Bereznev S">S. Bereznev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Volobujeva, O" uniqKey="Volobujeva O">O. Volobujeva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Traksmaa, R" uniqKey="Traksmaa R">R. Traksmaa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tallinn University of Technology, Materials Research Center, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>4 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Tverjanovich, A" uniqKey="Tverjanovich A">A. Tverjanovich</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Saint-Petersburg State University, 198503 Saint-Petersburg, Staryj Petergof</s1><s2>Ulyanovskaya 5</s2><s3>RUS</s3><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ulyanovskaya 5</wicri:noRegion></affiliation></author><author><name sortKey="Opik, A" uniqKey="Opik A">A. Öpik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Mellikov, E" uniqKey="Mellikov E">E. Mellikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229225</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229225 INIST</idno><idno type="RBID">Pascal:13-0229225</idno><idno type="wicri:Area/Main/Corpus">000B10</idno><idno type="wicri:Area/Main/Repository">000741</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Cadmium chloride</term><term>Cadmium sulfide</term><term>Cadmium tellurides</term><term>Cellular structure</term><term>Conducting polymers</term><term>Copper</term><term>Doping</term><term>Electrochemical electrodes</term><term>Electrodeposition</term><term>Glass</term><term>High vacuum</term><term>II-VI semiconductors</term><term>Illumination</term><term>Indium oxide</term><term>Naphthalene</term><term>Photovoltaic cell</term><term>Pinholes</term><term>Polymer films</term><term>Polypyrroles</term><term>Solar cells</term><term>Sulfonates</term><term>Tin oxide</term><term>Vacuum evaporation</term><term>Xenon</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt électrolytique</term><term>Semiconducteur II-VI</term><term>Cellule solaire</term><term>Structure cellulaire</term><term>Verre</term><term>Dispositif photovoltaïque</term><term>Vide poussé</term><term>Evaporation sous vide</term><term>Recuit</term><term>Chlorure de cadmium</term><term>Cuivre</term><term>Dopage</term><term>Naphtalène</term><term>Sulfonate</term><term>Pyrrole polymère</term><term>Sulfure de cadmium</term><term>Tellurure de cadmium</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Electrode électrochimique</term><term>Eclairement</term><term>Xénon</term><term>Film polymère</term><term>Piqûre corrosion</term><term>Polymère conducteur</term><term>CdS</term><term>CdTe</term><term>CdCl2</term><term>Xe</term><term>8115P</term><term>8105D</term><term>8460J</term><term>8105H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term><term>Cuivre</term><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Glass/indium tin oxide/CdS/CdTe photovoltaic structures were prepared using the high vacuum evaporation method, followed by a typical activation procedure, which involves annealing of the structures at 415-430 °C in the presence of CdCl<sub>2</sub> in air. The main purpose of this work was to prepare and evaluate the performance of complete CdS/CdTe solar cell structures with polypyrrole (PPy) back contact and compare it to the structures with standard, copper containing back contact. Back contact layers of PPy doped with β-naphthalene sulfonate were deposited onto activated CdTe layers by photo-assisted electrodeposition technique in a three-electrode electrochemical cell. It was found that intensive white light illumination from a xenon lamp facilitates PPy deposition at a lower applied potential range and improves quality of obtained polymer films. Applied technique gives the possibility to deposit the PPy layer strictly onto illuminated photoactive CdTe surface eliminating possible short-circuiting through pinholes and cracks in CdTe photoabsorber layer. Furthermore, relatively low deposition potential values give the possibility to reduce electrochemical degradation of CdS/CdTe photovoltaic structure in an electrochemical cell.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>JARKOV (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BEREZNEV (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>VOLOBUJEVA (O.)</s1></fA11><fA11 i1="04" i2="1"><s1>TRAKSMAA (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>TVERJANOVICH (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>ÖPIK (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>MELLIKOV (E.)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Tallinn University of Technology, Materials Research Center, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Saint-Petersburg State University, 198503 Saint-Petersburg, Staryj Petergof</s1><s2>Ulyanovskaya 5</s2><s3>RUS</s3><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>198-201</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550430</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229225</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Glass/indium tin oxide/CdS/CdTe photovoltaic structures were prepared using the high vacuum evaporation method, followed by a typical activation procedure, which involves annealing of the structures at 415-430 °C in the presence of CdCl<sub>2</sub> in air. The main purpose of this work was to prepare and evaluate the performance of complete CdS/CdTe solar cell structures with polypyrrole (PPy) back contact and compare it to the structures with standard, copper containing back contact. Back contact layers of PPy doped with β-naphthalene sulfonate were deposited onto activated CdTe layers by photo-assisted electrodeposition technique in a three-electrode electrochemical cell. It was found that intensive white light illumination from a xenon lamp facilitates PPy deposition at a lower applied potential range and improves quality of obtained polymer films. Applied technique gives the possibility to deposit the PPy layer strictly onto illuminated photoactive CdTe surface eliminating possible short-circuiting through pinholes and cracks in CdTe photoabsorber layer. Furthermore, relatively low deposition potential values give the possibility to reduce electrochemical degradation of CdS/CdTe photovoltaic structure in an electrochemical cell.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15P</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépôt électrolytique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electrodeposition</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Solar cells</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Structure cellulaire</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Cellular structure</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" 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l="FRE"><s0>8105H</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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